Magnetic-Field-Driven Superconductor-Insulator-Type Transition in Graphite
نویسنده
چکیده
A magnetic-field-driven transition from metallicto semiconducting-type behavior in the basal-plane resistance takes place in highly oriented pyrolytic graphite at a field Hc ∼ 1 kOe applied along the hexagonal c-axis. The analysis of the data reveals a striking similarity between this transition and that measured in thinfilm superconductors and Si MOSFET’s. However, in contrast to those materials, the transition in graphite is observable at almost two orders of magnitude higher temperatures.
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